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Hankkija
| Vastaanotettu Hilmaan | 2020-09-14 |
| Ilmoituksen numero | 2020-053877 |
| TED numero | 2020/S 182-437907 |
| Ostajaorganisaatio | University of Jyväskylä (0245894-7 ) Seminaarinkatu 15 FI-40014 Jyväskylän yliopisto http://www.jyu.fi |
| Hankinnan otsikkotiedot | Inductively coupled plasma reactive ion etch tool / ICP-RIE system |
| Hankinnan yhteenlaskettu kokonaisarvo koko ajalle (ilman alv:ta) arvio | |
| Hankinnan yhteenlaskettu kokonaisarvo koko ajalle (ilman alv:ta) lopullinen | 380 000 EUR |
| Alkuperäinen ilmoitus | https://www.hankintailmoitukset.fi/en/public/procurement/35862/notice/53877/overview |
| Originaali JSON tietue | 53877.json |
Ostettava
| Hankinnan lyhyt kuvaus | An inductively-coupled-plasma reactive-ion-etcher (ICP-RIE), capable of flexible etching of different materials. Whole system with all required components. Capable of handling wafers up to 200 mm in diameter. There must be a loadlock and (semi)automatic loading of single-wafers and small chips between loadlock and process chamber. The substrate electrode temperature should be controllable between at least -150 C and 300 C. The main focus of the machine is in etching thin layers (less than 300 nm) of silicon on top of silicon dioxide with high selectivity to silicon dioxide, high anisotropy, smooth sidewalls and no notching. In addition, the machine needs to be able to run the Bosch process when needed. Anisotropic etching of silicon nitride will also be required. Specifically, process specifications must be given for the following processes: i) Anisotropic etching of silicon photonic crystal structures on SOI: device layer 200-300 nm, PMMA mask, feature sizes down to 20 nm, sidewall verticality and smoothness critical. ii) Anisotropic etching of 50 nm silicon layers with high (>20:1) selectivity to silicon dioxide. Sidewall verticality and notching control critical. iii) Anisotropic silicon nitride etching iv) Machine needs also to be capable of deep, anisotropic, through the wafer etching of silicon We expect that to achieve these we need to be able to do at least following processes: - cryogenic etching of silicon with SF6 and O2, - Bosch etching of silicon for deep structures (SF6, C4F8), and - “pseudo-bosch” etching of silicon with the same process gases as Bosch but without the timed pulsing of gases. |
| Hankintanimikkeistö (CPV) pää | Laboratory, optical and precision equipments (excl. glasses) (38000000) |
| Hankintanimikkeistö (CPV) muut | |
| Aluekoodi | FI193 |
| Pääasiallinen suorituspaikka | University of Jyväskylä, Nanoscience Center / Department of Physics |
Sopimukset
| Päätös päivämäärä | 2020-09-11 |
| Sopimusnumero | 217/02.03.00.00/2020 |
| Myyjät | Oxford Instruments Nanotechnology Tools Ltd, trading as Oxford Instruments Plasma Technology (UK) |
