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Vastaanotettu Hilmaan	2020-05-11
Ilmoituksen numero	2020-046176
TED numero	2020/S 092-219231
Ostajaorganisaatio	University of Jyväskylä (0245894-7 ) Seminaarinkatu 15 FI-40014 Jyväskylän yliopisto http://www.jyu.fi
Hankinnan otsikkotiedot	Inductively coupled plasma reactive ion etch tool / ICP-RIE system
Hankinnan yhteenlaskettu kokonaisarvo koko ajalle (ilman alv:ta) arvio
Hankinnan yhteenlaskettu kokonaisarvo koko ajalle (ilman alv:ta) lopullinen
Alkuperäinen ilmoitus	https://www.hankintailmoitukset.fi/en/public/procurement/35862/notice/46176/overview
Originaali JSON tietue	46176.json

Hankinnan lyhyt kuvaus	An inductively-coupled-plasma reactive-ion-etcher (ICP-RIE), capable of flexible etching of different materials. Whole system with all required components. Capable of handling wafers up to 200 mm in diameter. There must be a loadlock and (semi)automatic loading of single-wafers and small chips between loadlock and process chamber. The substrate electrode temperature should be controllable between at least -150 C and 300 C. The main focus of the machine is in etching thin layers (less than 300 nm) of silicon on top of silicon dioxide with high selectivity to silicon dioxide, high anisotropy, smooth sidewalls and no notching. In addition, the machine needs to be able to run the Bosch process when needed. Anisotropic etching of silicon nitride will also be required. Specifically, process specifications must be given for the following processes: i) Anisotropic etching of silicon photonic crystal structures on SOI: device layer 200-300 nm, PMMA mask, feature sizes down to 20 nm, sidewall verticality and smoothness critical. ii) Anisotropic etching of 50 nm silicon layers with high (>20:1) selectivity to silicon dioxide. Sidewall verticality and notching control critical. iii) Anisotropic silicon nitride etching iv) Machine needs also to be capable of deep, anisotropic, through the wafer etching of silicon We expect that to achieve these we need to be able to do at least following processes: - cryogenic etching of silicon with SF6 and O2, - Bosch etching of silicon for deep structures (SF6, C4F8), and - “pseudo-bosch” etching of silicon with the same process gases as Bosch but without the timed pulsing of gases. In addition, the tenderer should quote any gas lines they deem necessary for the above mentioned processes, incl. silicon nitride etching. Gas lines for HBr etching of silicon and chlorine based etching of aluminium nitride (AlN) should also be quoted. Contracting authority (JYU) may suspend the procurement procedure if the tenders exceed the budget available for the procurement. Prior references of supplying comparable systems are required.
Hankintanimikkeistö (CPV) pää	Laboratory, optical and precision equipments (excl. glasses) (38000000)
Hankintanimikkeistö (CPV) muut
Aluekoodi	FI193
Pääasiallinen suorituspaikka	University of Jyväskylä, Nanoscience Center / Department of Physics